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1

HVPE GaN for high power electronic Schottky diodes

Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Mulholland, Gregory, Metzger, Robert, Leach, Jacob H., Suvarna, Puneet

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 802 KB

english, 2013

2

Si implant-assisted Ohmic contacts to GaN

Cuong Nguyen, Pankaj Shah, Edward Leong, Michael Derenge, Kenneth Jones

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.17 MB

english, 2010

3

Al, B, and Ga ion-implantation doping of SiC

Evan M. Handy, Mulpuri V. Rao, O. W. Holland, P. H. Chi, K. A. Jones, M. A. Derenge, R. D. Vispute, T. Venkatesan

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 198 KB

english, 2000

4

Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps

Kirchner, K.W., Jones, Kenneth A., Derenge, Michael A., Dudley, Michael, Powell, Adrian R.

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 697 KB

english, 2007

5

A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere

M.A. Derenge, K.A. Jones, K.W. Kirchner, M.H. Ervin, T.S. Zheleva, S. Hullavarad, R.D. Vispute

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 760 KB

english, 2004

6

Electrical, CL, EPR and RBS study of annealed SiC implanted with Al or Al and C

K. A. Jones, M. A. Derenge, M. H. Ervin, P. B. Shah, J. A. Freitas, R. D. Vispute, R. P. Sharma, G. J. Gerardi

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 205 KB

english, 2004

7

Assessment of the pendeo-epitaxy effect on 2DEG mobility in III-nitride HEMT heterostructures

K. A. Bulashevich, S. Yu. Karpov, Yu. N. Makarov, T. S. Zheleva, P. B. Shah, M. A. Derenge, K. A. Jones

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 347 KB

english, 2008

8

The properties of annealed AlN films deposited by pulsed laser deposition

K. A. Jones, M. A. Derenge, T. S. Zheleva, K. W. Kirchner, M. H. Ervin, M. C. Wood, R. D. Vispute, R. P. Sharma, T. Venkatesan

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 210 KB

english, 2000

9

A comparison of graphite and AlN caps used for annealing ion-implanted SiC

K. A. Jones, M. A. Derenge, P. B. Shah, T. S. Zheleva, M. H. Ervin, K. W. Kirchner, M. C. Wood, C. Thomas, M. G. Spencer, O. W. Holland, R. D. Vispute

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 724 KB

english, 2002

10

Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

S. S. Hullavarad, R. D. Vispute, B. Nagaraj, V. N. Kulkarni, S. Dhar, T. Venkatesan, K. A. Jones, M. Derenge, T. Zheleva, M. H. Ervin, A. Lelis, C. J. Scozzie, D. Habersat, A. E. Wickenden, L. J. Curr

Journal:

Journal of Electronic Materials

Year:

2006

Language:

english

File:

PDF, 643 KB

english, 2006

11

Structural and Chemical Comparison of Graphite and BN/AlN Caps Used for Annealing Ion Implanted SiC

K.A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, M.A. Derenge, A. Bolonikov, T.S. Sudarshan, R.D. Vispute, S.S. Hullavarad, S. Dhar

Journal:

Journal of Electronic Materials

Year:

2008

Language:

english

File:

PDF, 1.07 MB

english, 2008

12

Growth of GaN films on PLD-deposited TaC substrates

K.W. Kirchner, M.A. Derenge, T.S. Zheleva, R.D. Vispute, K.A. Jones

Journal:

Journal of Crystal Growth

Year:

2010

Language:

english

File:

PDF, 1.53 MB

english, 2010

13

Automatic orthogonalization detection approach for GS algorithm

Xiao Dan, Gu Dereng

Journal:

Journal of Electronics (China)

Year:

1995

Language:

english

File:

PDF, 297 KB

english, 1995

14

Approaches For Reduction Of The Defect Density In Group III Nitride Based Heterostructures

Zheleva, T. S., Karoui, F., Kirchner, K., Derenge, M., Jones, K. A., Vispute, R. D., Venkatesan, T.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 4.89 MB

english, 2000

15

Issues Surrounding Xenotransplantation

Sara Derenge, Marilyn Rossman Bartucci

Journal:

Year:

1999

Language:

english

File:

PDF, 456 KB

english, 1999

16

Overexpression of Monocyte Chemotactic Protein-1/CCL2 in β-Amyloid Precursor Protein Transgenic Mice Show Accelerated Diffuse β-Amyloid Deposition

Masaru Yamamoto, Masahide Horiba, James L. Buescher, DeReng Huang, Howard E. Gendelman, Richard M. Ransohoff, Tsuneya Ikezu

Journal:

The American Journal of Pathology

Year:

2005

Language:

english

File:

PDF, 982 KB

english, 2005

17

Electrical characteristics of Al[sub x]Ga[sub 1âx]N Schottky diodes prepared by a two-step surface treatment

Motayed, Abhishek, Sharma, Ashok, Jones, Kenneth A., Derenge, Michael A., Iliadis, Agis A., Mohammad, S. Noor

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 404 KB

english, 2004

18

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

Freitas, Jaime A., Jones, Kenneth A., Derenge, Michael A., Vispute, R.D., Hullavarad, Shiva S.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 409 KB

english, 2006

19

[American Institute of Aeronautics and Astronautics 20th AIAA International Communication Satellite Systems Conference and Exhibit - Montreal, Quebec, Canada (12 May 2002 - 15 May 2002)] 20th AIAA International Communication Satellite Systems Conference and Exhibit - Regulatory Issues for Satellite Broadcasting and Terrestrial Services in the 12GHz Band

Durrani, Sajjad, Derenge, Thomas

Year:

2002

Language:

english

File:

PDF, 58 KB

english, 2002

20

Annealing studies of AlN capped, MOCVD grown GaN films

Derenge, Michael A., Kirchner, Kevin W., Jones, Kenneth A., Suvarna, Puneet, Shahedipour-Sandvik, Shadi

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 1.77 MB

english, 2014

21

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS 2011) - College Park, MD (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - GaN power Schottky diodes fabricated on low doped MOCVD layers grown on multiple substrates

Tompkins, R. P., Zhou, S., Smith, J. R., Derenge, M. A., Kirchner, K. W., Jones, K. A., Mulholland, G., Metzger, R., Leach, J., Suvarna, P., Tungare, M., Tripathi, N., Shahedipour-Sandvik, F.

Year:

2011

Language:

english

File:

PDF, 153 KB

english, 2011

22

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - A study of metal-Ga ohmic metallizations to p-type 6H-SiC

Kanyogoro, E.N., Liu, L., Iliadis, A.A., Jones, K.A., Wood, M.C., Derenge, M., Loughran, T.C.

Year:

2001

Language:

english

File:

PDF, 152 KB

english, 2001

23

[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere

Derenge, M.A., Jones, K.A., Kirchner, K., Ervin, M., Hullavarad, S., Vispute, R.D.

Year:

2003

Language:

english

File:

PDF, 330 KB

english, 2003

24

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Si implant-assisted ohmic contacts to GaN

Cuong Nguyen,, Shah, P., Leong, E., Derenge, M., Jones, K.

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

25

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Implant activation in GaN Using an AlN cap

Hager, C., Jones, K. A., Derenge, M.A., Ewing, D.J., Zheleva, T.S.

Year:

2007

Language:

english

File:

PDF, 162 KB

english, 2007

26

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Graphene containing conductive inks for electrical contacts to power semiconductor devices

Shah, P.B., Lettow, J., Nyguen, C., Derenge, M.A., Jones, K.A., Batyrev, I., Piekarski, B.

Year:

2009

Language:

english

File:

PDF, 258 KB

english, 2009

27

Effectiveness of AlN encapsulant in annealing ion-implanted SiC

Handy, Evan M., Rao, Mulpuri V., Jones, K. A., Derenge, M. A., Chi, P. H., Vispute, R. D., Venkatesan, T., Papanicolaou, N. A., Mittereder, J.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 475 KB

english, 1999

28

Improved performance of Schottky diodes on pendeoepitaxial gallium nitride

Zheleva, T., Derenge, M., Ewing, D., Shah, P., Jones, K., Lee, U., Robins, L.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 502 KB

english, 2008

29

Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

Jones, K. A., Shah, P. B., Zheleva, T. S., Ervin, M. H., Derenge, M. A., Freitas, J. A., Harmon, S., McGee, J., Vispute, R. D.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 802 KB

english, 2004

30

Activation of ion implanted Si in GaN using a dual AlN annealing cap

Hager, C. E., Jones, K. A., Derenge, M. A., Zheleva, T. S.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.35 MB

english, 2009

31

Epitaxy and recrystallization kinetics of TaC thin films on SiC for high temperature processing of semiconductor devices

Vispute, R. D., Hullavarad, S., Luykx, A., Young, D., Dhar, S., Venkatesan, T., Jones, K. A., Zheleva, T. S., Ervin, M., Derenge, M.

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 579 KB

english, 2007

32

Schottky metal-GaN interface KOH pretreatment for improved device performance

Shah, P. B., Batyrev, I., Derenge, M. A., Lee, U., Nyguen, C., Jones, K. A.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2010

Language:

english

File:

PDF, 912 KB

english, 2010

33

Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching

Shah, P. B., Nichols, B. M., Derenge, M. D., Jones, K. A.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2004

Language:

english

File:

PDF, 735 KB

english, 2004

34

Variable-dose (10[sup 17]–10[sup 20] cm[sup −3]) phosphorus ion implantation into 4H–SiC

Handy, Evan M., Rao, Mulpuri V., Holland, O. W., Jones, K. A., Derenge, M. A., Papanicolaou, N.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 332 KB

english, 2000

35

High-transparency Ni/Au bilayer contacts to n-type GaN

Motayed, Abhishek, Davydov, Albert V., Bendersky, Leonid A., Wood, Mark C., Derenge, Michael A., Wang, Dong Feng, Jones, Kenneth A., Mohammad, S. Noor

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 647 KB

english, 2002

36

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - The Effects of Implanting Al and Al and C at Different Temperatures in Different Concentrations into SiC

Stepp, D., Jones, K.A., Zheleva, T.S., Derenge, M.A., Vispute, R.D., Hullavarad, S., Dar, S.

Year:

2005

Language:

english

File:

PDF, 260 KB

english, 2005

37

4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control

Shah, Pankaj B., Geil, Bruce, Jones, Kenneth A., Griffin, T.E., Derenge, Michael A.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 360 KB

2000

38

1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal

Zhu, Lin, Shanbhag, Mayura, Chow, T.P., Jones, Kenneth A., Ervin, Matthew H., Shah, Pankaj B., Derenge, Michael A., Vispute, R.D., Venkatesan, T., Agarwal, Anant

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 328 KB

english, 2003

39

Variations in the Effects of Implanting Al at Different Concentrations into SiC

Jones, Kenneth A., Zheleva, T.S., Shah, Pankaj B., Derenge, Michael A., Freitas, Jaime A., Gerardi, G.J., Vispute, R.D., Hullavarad, Shiva S., Dar, S.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 10.11 MB

english, 2006

40

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

Zhu, Lin, Losee, P.A., Chow, T.P., Jones, Kenneth A., Scozzie, Charles J., Ervin, Matthew H., Shah, Pankaj B., Derenge, Michael A., Vispute, R.D., Venkatesan, T., Agarwal, Anant

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 337 KB

english, 2006

41

Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC

Jones, Kenneth A., Wood, M.C., Zheleva, T.S., Kirchner, K.W., Derenge, Michael A., Bolonikov, A., Sudarshan, Tangali S., Vispute, R.D., Hullavarad, Shiva S., Dhar, S.

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 1.44 MB

english, 2007

42

The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes

Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Suvarna, Puneet, Tungare, Mihir, Tripathi, Neeraj, Shahedipour-Sandvik

Journal:

Journal of Materials Research

Year:

2011

Language:

english

File:

PDF, 343 KB

english, 2011

43

Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN Cap

Jones, Kenneth A., Shah, Pankaj B., Derenge, Michael A., Ervin, Matthew H., Gerardi, G.J., Freitas, Jaime A., Braga, G.C.B., Vispute, R.D., Sharma, R.P., Holland, O.W.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 339 KB

2002

44

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC

Jones, Kenneth A., Zheleva, T.S., Kulkarni, V.N., Ervin, Matthew H., Derenge, Michael A., Vispute, R.D.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 873 KB

english, 2004

45

Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Jones, Kenneth A., Zheleva, T.S., Ervin, Matthew H., Shah, Pankaj B., Derenge, Michael A., Gerardi, G.J., Freitas, Jaime A., Vispute, R.D.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 10.60 MB

english, 2004

46

Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates

Saddow, Stephen E., Carter, G.E., Geil, Bruce, Zheleva, T.S., Melnychuck, Galyna, Okhuysen, M.E., Mazzola, Michael S., Vispute, R.D., Derenge, Michael A., Ervin, Matthew H., Jones, Kenneth A.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 418 KB

2000

47

GaN Power Schottky Diodes

Tompkins, R. P., Smith, J. R., Zhou, S., Kirchner, K. W., Derenge, M. A., Jones, K. A., Leach, J. H., Mulholland, G., Udwary, K., Preble, E., Suvarna, P., Tungare, M., Shahedipour-Sandvik, F.

Journal:

ECS Transactions

Year:

2012

Language:

english

File:

PDF, 340 KB

english, 2012

48

Achieving Low Doped (

Tompkins, R. P., Smith, J. R., Derenge, M. A., Kirchner, K. W., Zhou, S., Jones, K. A., Metzger, R., Leach, J., Suvana, P., Tungare, M., Shahedipou-Sandvik, F.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 308 KB

english, 2013

49

Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density

D. J. Ewing, M. A. Derenge, P. B. Shah, U. Lee, T. S. Zheleva, K. A. Jones

Year:

2008

Language:

english

File:

PDF, 948 KB

english, 2008

50

New insights into the transmissibility of Leishmania infantum from dogs to sand flies: experimental transmission reveals persistent parasite depots at bite sites

Aslan, Hamide, Oliveira, Fabiano, Meneses, Claudio, Castrovinci, Philip, Gomes, Regis, Teixeira, Clarissa, Derenge, Candace A., Orandle, Marlene, Gradoni, Luigi, Oliva, Gaetano, Fischer, Laurent, Vale

Journal:

The Journal of Infectious Diseases

Year:

2016

Language:

english

File:

PDF, 2.57 MB

english, 2016

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